Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs
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Abstract
We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs</title><author><name sortKey="Sellai, A" uniqKey="Sellai A">A. Sellai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, P.O Box 36 Sultan Qaboos University 123 Muscat</s1><s3>OMN</s3><sZ>1 aut.</sZ></inist:fA14><country>Oman</country><wicri:noRegion>Physics Department, P.O Box 36 Sultan Qaboos University 123 Muscat</wicri:noRegion></affiliation></author><author><name sortKey="Mesli, A" uniqKey="Mesli A">A. Mesli</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>IM2NP, UMR 6242 CNRS, Aix-Marseille University, Av. Normandie-Niemen</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Kruszewski, P" uniqKey="Kruszewski P">P. Kruszewski</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics Polish Academy of Sciences, al.Lotników 32/46</s1><s2>02-668 Warsaw</s2><s3>POL</s3><sZ>3 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>02-668 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Peaker, A R" uniqKey="Peaker A">A. R. Peaker</name><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>Microelectronics and Nanostructure Group, School of Electrical and Electronic Engineering, University of Manchester</s1><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><placeName><settlement type="city">Manchester</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName><orgName type="university">Université de Manchester</orgName></affiliation></author><author><name sortKey="Missous, M" uniqKey="Missous M">M. Missous</name><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>Microelectronics and Nanostructure Group, School of Electrical and Electronic Engineering, University of Manchester</s1><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><placeName><settlement type="city">Manchester</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName><orgName type="university">Université de Manchester</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0062559</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0062559 INIST</idno><idno type="RBID">Pascal:12-0062559</idno><idno type="wicri:Area/Main/Corpus">002309</idno><idno type="wicri:Area/Main/Repository">002371</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Electronic properties</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Quantum dots</term><term>Self-assembly</term><term>Temperature dependence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Autoassemblage</term><term>Dépendance température</term><term>Propriété électronique</term><term>Point quantique</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Semiconducteur III-V</term><term>InAs</term><term>GaAs</term><term>As In</term><term>As Ga</term><term>0130C</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. 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Conference</s1><s2>08</s2><s3>San Diego CA USA</s3><s4>2011-08-24</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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